Thin film transistors with printed semiconductive oxide channel and silver source-drain electrodes
Chen Z., Cui Z.
Ink-jet printed silver was used as source/drain electrodes to construct thin film transistors (TFTs) with solution-processed zinc indium tin oxide (ZITO) channel layer annealed at 400 °C. The thermal stability of printed silver electrodes was investigated. A electric conductive degradation of silver tracks was found after annealing at 300 °C in air. To understand and optimize the transistor performance, ZITO film thickness and compositional influence on device performance were invesigated. Thin film transistors were fabricated through ink-jet printing semiconductive oxide channel and silver source/drain electrodes. The ZITO TFTs with printed semiconductive oxide channel and silver source/drain electrodes have on/off ratios of more than 10 4 and saturation mobility of ∼0.10 cm2/V·s.