Cookies on this website

We use cookies to ensure that we give you the best experience on our website. If you click 'Accept all cookies' we'll assume that you are happy to receive all cookies and you won't see this message again. If you click 'Reject all non-essential cookies' only necessary cookies providing core functionality such as security, network management, and accessibility will be enabled. Click 'Find out more' for information on how to change your cookie settings.

© 2015 The Royal Society of Chemistry. Thermally cross-linkable poly(methylsilsesquioxane) (PMSQ) has been investigated as a printable dielectric ink to make the gate insulator for solution processed metal oxide (IGZO) thin-film transistors by aerosol jet printing. It was found that by increasing the curing temperature from 150 to 200 °C, the dielectric constant and loss tangent of the printed PMSQ layer reduces dramatically. The mobility, leakage current and gate current of the PMSQ enabled thin-film transistor reduces accordingly, while the on/off ratio increases with the increase of curing temperature. An interfacial layer was introduced to further improve the on/off ratio to 3 × 105 and reduce the leakage current to 2.6 × 10-10 A, which is the best result for the solution processed IGZO thin-film transistors using the PMSQ as the gate insulator at a curing temperature of only 150 °C. The study has demonstrated the feasibility of fabricating IGZO thin-film transistors by an all solution-based process.

Original publication




Journal article


RSC Advances

Publication Date





20924 - 20930