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© 2016, Science Press. All right reserved. This paper reported a valid method to fabricate ambipolar single-walled carbon nanotube (SWCNT) thin film transistors (TFTs) using BaTiO3 thin films as encapsulation layers. Carbon nanotube TFTs based on PFO-BT sorted sc-SWCNTs were firstly fabricated by aerosol jet printing. BaTiO3 thin films were then deposited on the top of the TFTs by spin-coating. After that, TFTs exhibited significant ambipolar properties with on-off ratio of 104-105, negligible hysteresis and threshold voltage of close to 0 V. Furthermore, the invert based on ambipolar TFTs showed high voltage gain of 35 at Vdd of 1.5 V and large noise margin of 0.44 V at Vdd of 1 V.

Original publication




Journal article


Yingxiang Kexue yu Guanghuaxue/Imaging Science and Photochemistry

Publication Date





152 - 158