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High-efficiency quantum dot light-emitting diodes (QLEDs) were fabricated using inkjet printing with a novel cross-linkable hole transport material N,N'-(9,9'-spirobi[fluorene]-2,7-diylbis[4,1-phenylene])bis(N-phenyl-4'-vinyl-[1,1'-biphenyl]-4-amine) (SDTF). The cross-linked SDTF film has excellent solvent resistance, high thermal stability, and the highest occupied molecular orbital (HOMO) level of -5.54 eV. The inkjet-printed SDTF film is very smooth and uniform, with roughness as low as 0.37 nm, which is comparable with that of the spin-coated film (0.28 nm). The SDTF films stayed stable without any pinhole or grain even after 2 months in air. All-solution-processed QLEDs were fabricated; the maximum external quantum efficiency of 5.54% was achieved with the inkjet-printed SDTF in air, which is comparable to that of the spin-coated SDTF in a glove box (5.33%). Electrical stabilities of both spin-coated and inkjet-printed SDTF at the device level were also investigated and both showed a similar lifetime. The study demonstrated that SDTF is very promising as a printable hole transport material for making QLEDs using inkjet printing.

Original publication

DOI

10.1021/acsami.7b00615

Type

Journal article

Journal

ACS Appl Mater Interfaces

Publication Date

17/05/2017

Volume

9

Pages

16351 - 16359

Keywords

air-stable, cross-linkable, hole transport material, inkjet printing, quantum dots