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A non-switch deep reactive ion etching (DRIE) process for rapid fabrication of nanoimprint templates has been developed. High etch rate without the scalloping effect has been achieved using inductive coupling plasma (ICP) with gas mixture of SF6, C4F8, O2 and Ar. The dependences of etch rate, selectivity, and etch profile on chamber pressure, platen power, and the ratio of different gases in the gas mixture were investigated and optimized process conditions were established. Silicon line pattern of 100 nm wide with the aspect ratio of 10:1 have been fabricated with the non-switch DRIE process. The fabricated template was used to imprint UV cured SU-8 photoresist. © 2008 Elsevier B.V. All rights reserved.

Original publication

DOI

10.1016/j.mee.2008.01.073

Type

Journal article

Journal

Microelectronic Engineering

Publication Date

01/05/2008

Volume

85

Pages

1015 - 1017