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RF MEMS switches have been fabricated. These switches are in the forms of cantilevers and bridges supported by silicon nitride beams. Two critical issues in the fabrication have been identified, which are topography of contact electrodes and stress induced bending of switch beams. Techniques have been developed to produce better planarised substrate and to realise controllable stress induced bending. These techniques are also applicable to fabrication of other microactuators based on silicon nitride beams. © The Institute of Engineering and Technology.

Type

Conference paper

Publication Date

01/12/2006

Pages

163 - 168