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The feasibility of using focused ion beam (FIB) to repair defects in rim and attenuated phase shift masks (PSM) was investigated. Contact holes of rim and attenuated PSMs with programmed opaque edge defects were fabricated and printed by g-line and i-line steppers after FIB repair. The post-repair ghost defects, associated with high FIB sputtering yield from the free edge of an opaque defect, were analysed by computer simulation and experimental lithography. © 1995 Elsevier Science B.V. All rights reserved.

Original publication

DOI

10.1016/0167-9317(94)00118-E

Type

Journal article

Journal

Microelectronic Engineering

Publication Date

01/01/1995

Volume

27

Pages

331 - 334