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Process conditions have been investigated for electron beam lithography in the resolution regime of 150nm and below, using chemically amplified resist AZPN114. Response surface method was used to reveal the influence and interrelationship between different thermal process parameters, based on 27 exposure experiments. Line features from 150nm down to 50nm have been obtained using commercial e-beam systems, with less exposure dose used and better line edge acuity than the results reported previously.

Original publication

DOI

10.1016/S0167-9317(96)00175-X

Type

Journal article

Journal

Microelectronic Engineering

Publication Date

01/01/1997

Volume

35

Pages

145 - 148