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A simple experimental method has been developed to extract parameters of α, β and η for proximity correction in electron beam lithography of chemically amplified resists. The method is based on the measurement of a series of isolated lines with different line widths exposed at a single exposure dose. The measured deviations from nominal line width are fitted into a function, from which the proximity parameters are obtained Proximity parameters for AZPN114 negative chemically amplified resist were derived by the new method and improvements on pattern fidelity and CD control after proximity correction are demonstrated.

Original publication

DOI

10.1016/S0167-9317(98)00041-0

Type

Journal article

Journal

Microelectronic Engineering

Publication Date

01/01/1998

Volume

41-42

Pages

183 - 186