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Simulation of electron beam lithography and optical lithography has been combined to investigate the influence of a distorted photomask feature on final photoresist image. Unlike the previous optical lithography simulation which was based on ideal mask design, the combined simulation has shown that mask distortion due to electron proximity effect play an important role in worsening the optical proximity effect, which is particularly critical at subresolution optical lithography.

Type

Conference paper

Publication Date

01/12/2000

Pages

87 - 90