Cookies on this website

We use cookies to ensure that we give you the best experience on our website. If you click 'Accept all cookies' we'll assume that you are happy to receive all cookies and you won't see this message again. If you click 'Reject all non-essential cookies' only necessary cookies providing core functionality such as security, network management, and accessibility will be enabled. Click 'Find out more' for information on how to change your cookie settings.

A novel technique, focused ion beam biased sputtering, is used to repair opaque defects in both conventional binary intensity masks and phase shift masks without leaving post-repair residual defects caused by gallium ion staining. The biased repair involves sputter removal of a defect to an area larger than its original size. The reduction of light transmission due to gallium stain is then effectively compensated by the enlarged repair. Results are presented on the repair of both conventional and attenuated phase shift masks using the biased method in comparison with conventional (no bias) repair. Optimum bias is determined by computer simulation of optical imaging and resist development. Unlike other anti-staining techniques which require additional equipment and process steps, the biased repair method involves only a change of sputtering strategy and can be implemented in any existing focused ion beam mask repair tools. © 1996 American Vacuum Society.


Journal article


Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Publication Date





3942 - 3946