Cookies on this website

We use cookies to ensure that we give you the best experience on our website. If you click 'Accept all cookies' we'll assume that you are happy to receive all cookies and you won't see this message again. If you click 'Reject all non-essential cookies' only necessary cookies providing core functionality such as security, network management, and accessibility will be enabled. Click 'Find out more' for information on how to change your cookie settings.

The computer aided proximity effect correction program CAPROX has been used to correct structures written at 20 keV electron beam energy. A new method has been developed to determine proximity parameters for a given e-beam/resist/substrate system. Proximity parameters for PMMA and EBR-9 and chemically amplified negative resist AZPN114 have been determined, and compared with those obtained from the established 'doughnut method'. The new method provides more reliable and accurate values, particularly for the forward scattering range. The dependence of α, β and η on resist thickness was also measured and the sensitivity of proximity correction using CAPROX to variation in all three scattering parameters was demonstrated. The new method improves CD linewidth linearity and accuracy in the range 0.1 ≈ 4.0 μm, achieving linewidth for both lines and gaps within 100 nm of designed size.

Type

Conference paper

Publication Date

01/01/1995

Volume

2437

Pages

375 - 382