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Two commercial positive tone chemically amplified resists, AZPF514 and UVIII, were investigated and compared for their performance in e-beam direct write of wafers at sub-150 nm resolutions. The resist sensitivity, process latitude and post exposure delay effect were studied. Both resists are of high sensitivity. They are insensitive to variation of post exposure bake conditions. The post exposure vacuum delay effect is much more pronounced in AZPF514. AZPF514 also suffers severely the `T-topping' effect. Feature dimension below 150 nm cannot be achieved with AZPF514, while sub-50 nm lines have been obtained with UVIII.

Original publication




Journal article


Microelectronic Engineering

Publication Date





255 - 258