Room temperature nanoimprint lithography using a bilayer of HSQ/PMMA resist stack
Tao J., Chen Y., Zhao X., Malik A., Cui Z.
A room temperature nanoimprint lithography (RTNIL) employing PMMA/HSQ (hydrogen silsequioxane) bilayer resist stack was developed. By combining with a post dry-etching process, this sequence is capable of patterning high resolution features in resist with high aspect ratio. Our investigation showed that the thermal nanoimprint lithography (NIL) with a heat cycle had considerable amount of pattern placement errors, but the RTNIL developed in this work was free from pattern misplacement. Using the PMMA/HSQ bilayer technique, 100 nm wide PdAu wires were readily replicated. Other advantages of the PMMA/HSQ bilayer for the RTNIL over conventional thermal NIL process have been discussed. © 2005 Elsevier B.V. All rights reserved.