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As a chemically amplified resist, UVN30 has been evaluated for mask use in high density pattern rapid fabrication by electron beam lithography. This resist displays excellent sensitivity and reasonable resolution for dense features. At optimum conditions proximity effect is eliminated and 75 nm and 150 nm dense lines resolved in a 300 nm thick film with writing field of 1mm2. With UVN30 mask, Si nanostructures are etched by non-switch DRIE etch chemistry developed in this work, which achieves high etch rate and smooth sidewall. This method is a promising technique for fast speed fabrication of nanophotonics, nanochannels and Si master stamps for nanoimprint.

Original publication

DOI

10.1117/12.782497

Type

Conference paper

Publication Date

01/12/2007

Volume

6724