Cookies on this website

We use cookies to ensure that we give you the best experience on our website. If you click 'Accept all cookies' we'll assume that you are happy to receive all cookies and you won't see this message again. If you click 'Reject all non-essential cookies' only necessary cookies providing core functionality such as security, network management, and accessibility will be enabled. Click 'Find out more' for information on how to change your cookie settings.

The lithographic process of AZ5214 used as positive and negative photoresist was studied experimentally. the optimal process parameters where the thickness of resist film is 1 μm was given. it was shown that the wider the line is, the higher the image reversal accuracy will be. The image reversal error of bright field mask is less than that of dark field mask.


Journal article


Weixi Jiagong Jishu/Microfabrication Technology

Publication Date



23 - 27