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The lithographic process of AZ5214 used as positive and negative photoresist was studied experimentally. the optimal process parameters where the thickness of resist film is 1 μm was given. it was shown that the wider the line is, the higher the image reversal accuracy will be. The image reversal error of bright field mask is less than that of dark field mask.

Type

Journal article

Journal

Weixi Jiagong Jishu/Microfabrication Technology

Publication Date

01/06/1999

Pages

23 - 27