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© 2014 IEEE. Thin film transistors (TFT) were constructed by inkjet printing of indium oxide semiconductor, which were annealed at the temperature of 200-300°C. Good morphology of printed indium oxide films was achieved and the printed thin film transistors exhibited acceptable performances above 250°C of annealing temperature. Furthermore, electron mobility in excess of 0.5cm2/Vs was obtained at processed temperature of 200°C through additional vacuum annealing.

Original publication




Conference paper

Publication Date



422 - 425