Printed low temperature metal oxide thin film transistors
Chen Z., Wu XZ., Zhou T., Cui Z.
Thin film transistors (TFT) were constructed by inkjet printing of indium oxide semiconductor, which were annealed at the temperature of 200-300°C. Good morphology of printed indium oxide films was achieved and the printed thin film transistors exhibited acceptable performances above 250°C of annealing temperature. Furthermore, electron mobility in excess of 0.5cm2/Vs was obtained at processed temperature of 200°C through additional vacuum annealing.