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© 2014 IEEE. Thin film transistors (TFT) were constructed by inkjet printing of indium oxide semiconductor, which were annealed at the temperature of 200-300°C. Good morphology of printed indium oxide films was achieved and the printed thin film transistors exhibited acceptable performances above 250°C of annealing temperature. Furthermore, electron mobility in excess of 0.5cm2/Vs was obtained at processed temperature of 200°C through additional vacuum annealing.

Original publication

DOI

10.1109/NEMS.2014.6908841

Type

Conference paper

Publication Date

01/01/2014

Pages

422 - 425