A lift-off process for high resolution patterns using PMMA/LOR resist stack
Chen Y., Peng K., Cui Z.
A lift-off process using a bi-layer resist stack with PMMA on top and lift-off resist (LOR) below was investigated. The dissolution rates of LOR underneath the PMMA layer in alkali solvent, CD26, were measured under various processing conditions. Our results indicate that the undercut length can be well controlled so that pattern transfer by lift-off using this bi-layer structure can be carried out reliably for feature sizes from sub micron down to sub 100 nm. © 2004 Elsevier B.V. All rights reserved.