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A lift-off process using a bi-layer resist stack with PMMA on top and lift-off resist (LOR) below was investigated. The dissolution rates of LOR underneath the PMMA layer in alkali solvent, CD26, were measured under various processing conditions. Our results indicate that the undercut length can be well controlled so that pattern transfer by lift-off using this bi-layer structure can be carried out reliably for feature sizes from sub micron down to sub 100 nm. © 2004 Elsevier B.V. All rights reserved.

Original publication

DOI

10.1016/S0167-9317(04)00111-X

Type

Conference paper

Publication Date

01/01/2004

Volume

73-74

Pages

278 - 281