Cookies on this website
We use cookies to ensure that we give you the best experience on our website. If you click 'Continue' we'll assume that you are happy to receive all cookies and you won't see this message again. Click 'Find out more' for information on how to change your cookie settings.

Rim and attenuated phase shift masks can extend the range of i-line optical stepper lithography to 0.4 μm with enhanced depth of field. The repair of defects through subtractive and additive methods using focused ion beams is critical to the future success of the technology. Printability tests and simulation studies demonstrate the hierarchy of defects in which both rPSM and aPSM types are less tolerant of absorbing/attenuating defects, but more tolerant of clear defects than the corresponding conventional BIM. Repair trials reveal the existence of a new type of post repair defect - the phase trench - but also clearly demonstrate the feasibility of repair using FIB methods.

Type

Conference paper

Publication Date

01/12/1995

Volume

2439

Pages

221 - 230