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Modelling of a silicon resonator as a pressure sensor is presented. The resonator is electrothermally excited and the resonance frequency shift is detected by a piezoresistive thin film detector. Computer simulation using the commercial MEMS software tool IntelliSuite™ is compared with analytical model. Various design aspects, such as the pressure sensitivity, electrothermal heating of vibrating beam, influence of detection current and damping effect are investigated. Silicon resonator sensors have been fabricated and measured. The characteristics predicted by computer simulation has been confirmed by experimental results.

Original publication

DOI

10.1023/A:1016067523514

Type

Journal article

Journal

Analog Integrated Circuits and Signal Processing

Publication Date

01/07/2002

Volume

32

Pages

29 - 35