Printed high-performance carbon nanotube thin film transistors based on PFO-BT sorted large-diameter semiconducting carbon nanotubes
Liu Z., Zhao J., Xu W., Qian L., Nie S., Cui Z.
A simple and valid method has been developed for printing thin-film transistors (TFTs) with inks made from poly[(9,9-dioctylfluorenyl-2,7-diyl)-co- (1,4-benzo-2,1-3-thiadiazole)] (PFO-BT) sorted semiconducting carbon nanotubes (SWCNTs). Sorted sc-SWCNT inks were directly printed on SiO2/Si substrates with pre-patterned gold electrode arrays by an aerosol jet printer. Printed bottom-gate TFTs with mobility up to 55.5 cm2V -1s-1 and on/off ratio up to 106 have been achieved with short printing cycles. Interestingly, printed top-gate TFTs also showed excellent electrical properties with high on/off ratio and high mobility using atomic layer deposition of Al2O3 as the dielectric layer and printed silver electrodes as top-gate electrodes. As a demonstrator, printed inverters based on the top-gate TFTs have been constructed and a maximum voltage gain of 11 at Vdd of 2 V have been obtained.