Cookies on this website

We use cookies to ensure that we give you the best experience on our website. If you click 'Accept all cookies' we'll assume that you are happy to receive all cookies and you won't see this message again. If you click 'Reject all non-essential cookies' only necessary cookies providing core functionality such as security, network management, and accessibility will be enabled. Click 'Find out more' for information on how to change your cookie settings.

In this study, we successfully fabricated single-walled carbon nanotube (SCNT) thin-film transistors (TFTs) by ink-jet printing technology using the prepared high-quality SCNT ink. The SCNT inks were obtained by chemically functionalized CoMoCat 76 with 2, 2-azobisisobutyronitrile (AIBN). The absorption spectra, Raman spectra and photoluminescence excitation (PLE) spectra demonstrated that metallic species and small diameter semiconducting species in CoMoCat 76 were effectively eliminated after reaction with AIBN. As-prepared SCNTs inks were directly used to print TFTs using Aerosol Jet printing system without any purification. The printed top-gated and bottom-gated TFTs exhibited the effective mobility of ∼0.5 cm2/Vs and on/off ratio of over 103. Especially, hysteresis was eliminated using commercial polydimethoxysilane (PDMS) elastomer containing ion liquid as the top gate dielectric. The process opens the route to fabricate all printed high performance SCNT TFTs on flexible substrate.

Type

Conference paper

Publication Date

23/11/2011

Volume

1

Pages

192 - 195